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Proceedings of the E-MRS Conference, Symposium G. Substrates of Wide Bandgap MaterialsFORNARI, Roberto; ROJO, Juan Carlos; YAKIMOVA, Rositza et al.Journal of crystal growth. 2008, Vol 310, Num 5, issn 0022-0248, 150 p.Conference Proceedings

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Surface step morphologies of GaN films grown on vicinal sapphire (0001) substrates by rf-MBESHEN, X. Q; OKUMURA, H.Journal of crystal growth. 2007, Vol 300, Num 1, pp 75-78, issn 0022-0248, 4 p.Conference Paper

Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphireWILLIAMS, Adrian D; MOUSTAKAS, T. D.Journal of crystal growth. 2007, Vol 300, Num 1, pp 37-41, issn 0022-0248, 5 p.Conference Paper

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Status of hydrothermal growth of bulk ZnO : Latest issues and advantagesDEM'YANETS, L. N; LYUTIN, V. I.Journal of crystal growth. 2008, Vol 310, Num 5, pp 993-999, issn 0022-0248, 7 p.Conference Paper

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MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and SiHONDA, Y; YANASE, Y; TSUJI, M et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 110-113, issn 0022-0248, 4 p.Conference Paper

Growth of thick Al_xGa_1-xN ternary alloy by hydride vapor-phase epitaxyYAMANE, Takayoshi; SATOH, Fumitaka; MURAKAMI, Hisashi et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 164-167, issn 0022-0248, 4 p.Conference Paper

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Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structuresKAKANAKOVA -GEORGIEVA, A; FORSBERG, U; IVANOV, I. G et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 100-103, issn 0022-0248, 4 p.Conference Paper

α-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxyZHU, T; MARTIN, D; BUTTE, R et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 186-189, issn 0022-0248, 4 p.Conference Paper

Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)MAASSEN, Thomas; DEN BERG, J. Jasper Van; IJBEMA, Natasja et al.Nano letters (Print). 2012, Vol 12, Num 3, pp 1498-1502, issn 1530-6984, 5 p.Article

Status and perspectives of the ammonothermal growth of GaN substratesHASHIMOTO, Tadao; FENG WU; SAITO, Makoto et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 876-880, issn 0022-0248, 5 p.Conference Paper

The large-sized diamond single-crystal synthesis by hot filament CVDYAMAZAKI, Ko; FURUICHI, Kazuyuki; TSUMURA, Iori et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 1019-1022, issn 0022-0248, 4 p.Conference Paper

Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxyDARAKCHIEVA, V; MONEMAR, B; USUI, A et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 959-965, issn 0022-0248, 7 p.Conference Paper

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactorHEMMINGSSON, C; PASKOV, P. P; POZINA, G et al.Journal of crystal growth. 2007, Vol 300, Num 1, pp 32-36, issn 0022-0248, 5 p.Conference Paper